InspirationHighlight

AIXaTECH’s low temperature epitaxial AlN increases performance of MIS diodes

April 2019

New developed MIS-diodes covered with AIXaTECH’s low temperature epitaxy AlN as a dielectric exhibited three orders of magnitude lower gate leakage current compared to conventional Schottky diodes.
AIXaTECH’s templates also demonstrated their capability to serve as base in HVPE. In HVPE the GaN could be directly deposited on the template, eliminating the MOCVD-GaN-buffer-step. AIXaTECH templates have been also successfully used for deep UV LED growth. Here high quality MOCVD AlN could be grown on the AIXaTECH templates.

In cooperation with the Nanyang Technological University of Singapore the behavior of HEMT structures covered with AlN have been investigated. Matthew Whiteside in the team of Professor Arulkumaran have used AlGaN/GaN metal-insulator-semiconductor (MIS) diodes with AIXaTECH’s low temperature epitaxy (LTE) AlN grown at 200°C as a dielectric. The new developed MIS-diodes exhibited 3 orders of magnitude lower gate leakage current compared to conventional Schottky diodes. The interface state density (Dit) was estimated at a minimum value of 2.6×1012cm-2eV-1at 0.24 eV below the conduction band. This work was presented at the 3rdElectron Devices Technology and Manufacturing (EDTM) Conference 2019 in Singapore and was published in the IEEE EDTM conference proceedings.

AIXaTECH’s novel low temperature epitaxial process now also demonstrates its capability in a further application field. With its high throughput and in-line architecture GaN-based electronics can be price competitive with silicon based electronics.

Cross section TEM of a HEMT structure with AIXaTECH’s LTE AlN