Low Temperature Epitaxy – straight forward approach for microLED displays

December 2019

AIXaTECH’s novel Low Temperature Epitaxy (LTE) is the ideal solution for a revolutionary approach to manufacture the next generation of microLED displays. Due to its low temperature and due to its novel system architecture large format glass substrates can be loaded and the LED directly grown on them. Costly pick and place process is rendered obsolete. Larger micro LED displays become economically viable. Due to the ability to apply LTE as in-line technology, further process steps can be easily integrated.
Leading manufacturers of smart devices are looking for alternative solutions to LCD or OLED displays. Displays account for the lion share of energy consumption by mobile devices. Substituting OLED displays by microLED lowers energy usage by up to 50%; replacing LCD by microLED displays saves up to 90%. However, adoption of microLED has been held back by the high manufacturing cost. This is why usage of microLED is expected to be restricted to small displays for example for high-end smart watches.
Low Temperature Epitaxy is about to change the game. Due to the low running costs and the increase in capacity, the technology promises to reduce the epitaxial costs by more than 80% compared to MOCVD. Moreover, the system architecture allows to load large format substrates. And last but not least the low temperature enhances the spectrum of substrates to be grown on. In MOCVD chambers at 1000°C glass substrates would melt. At 300°C glass can be loaded without the risk of damaging the substrate. The microLEDs can be grown directly on the glass substrate. This monolithic approach renders the costly pick and place process obsolete and reduces thus the manufacturing costs further.


AIXaTECH CTO Dr. Yimaz Dikme loads a large glass substrate to the novel epitaxy system