See the experts of AIXaTECH on the following occasions:
18.6. – 23.6.2017
Dr. Yilmaz Dikme is invited to speak at the 17th International Conference on Materials for Advanced Technologies. The biennial ICMAT will be held from 18 – 23 June 2017 at Suntec Singapore and attracts more than 2,500 experts in the material field from all over the world.
“I’m going to show the latest results of our low temperature epitaxy. Special thanks to our co-workers from Tyndall University in Ireland and the colleagues from IMRE in Singapore who had a thorough scientific look at our single crystal grades.” explained Yilmaz.
The AlN base layers generated at AIXaTECH pave the way to high quality LEDs and to high power devices. The single crystal AlN layers allow to grow directly GaN layers on the template with a minimum of dislocation and in case of silicon by avoiding parasitic layers at the interface of AlN and the substrate material. “Everybody who wants to learn more about the material and its possibilities is kindly invited to join my talk.” draws Yilmaz the bow from technology to application.