Technology

Single Crystal. Performance. Perfection
Enhanced Function – Decreased Costs – One Base: AIXaTECH

AIXaTECH has developed a novel low-temperature deposition technology for III-V materials. Versus existent
technologies AIXaTECHs approach has some decisive advantages: The deposition works with temperatures
lower 300°C. The layers generated have single crystal quality. The process works with solid depositionmaterial.
The technology is easy scalable. And: The technology is patented!


Light Emitting Diodes

Cost & design freedom


For the LED sector AIXaTECH offers AlN- templates on sapphire and silicon.

The customer benefit is:

  • AIXaTECH’s patent portfolio enables customers to manu -facture designs without paying license fees to competitors.
  • approx. 30% cost reduction versus standard process via MOCVD.
  • replacement of expensive MOCVD GaN-templates for HVPE.
  • optimized yield due to single crystal structure.

Power Electronics

Enhanced function


For the Power Electronics sector AIXaTECH offers AIN-templates on silicon.

The customer benefit is:

  • retention of semiconductor characteristics of silicon due to low process temperature.
  • design freedom due to AIXaTECH’s patent portfolio.
  • excellent price-performance ratio.
  • optimized yield due to single crystal structure.


Product release in
short term!

Solar Power

Enhanced performance


For the Solar Power sector AIXaTECH will be working on InGaN layers.

The customer benefit is:

  • low process temperature guarantees InGaN layers with high In-content of high quality in the first place.
  • tandem solar cells with InGaN layers offer efficiency increases in double-digit area versus standard silicon cells.
  • design freedom due to AIXaTECH’s patent portfolio.
  • efficiency increase is accompanied by an excellent price-performance ratio.