Light Emitting Diodes

Expertise: Light Emitting Diodes
A huge market with even greater potential

Due to their efficiency and low cost, Light Emitting Diodes (LED) are gaining more and more acceptance.
LEDs also enhance safety and offer an aesthetic appeal. They are environment-friendly as they reduce energy
consumption by up to 80 percent. Thus the semiconductor light source is penetrating applications ranging
from general lighting over backlighting up to automotive lighting.

Market Characteristics

Huge market, rising competition

The ability of LEDs to provide high-quality and energy-efficient light compared to other existing lighting technologies has accelerated the demand for LEDs worldwide. The analysts forecast the Global LED Lighting market to grow at a CAGR of more than 25 percent over the period 2015-2019. A stimulus for the increasing demand is the rapid decrease in LED prices in recent years. As a result manufacturers are facing an intense competition, leading to a constant need to differentiate i.e. via light quality and at the same time to reduce manufacturing costs.

AIXaTECH’s Position

Reliable partner

AIXaTECH’s claim is to reduce costs right at the origin of the LED process chain. The companies successful approach is to substitute the time consuming generation of buffer layers in the MOCVD reactor. Instead the customer is supplied with single crystal AlN-templates on sapphire or silicon substrates and can start directly growing GaN layers on it. Furthermore AIXaTECH’s templates have proven as a powerful and cost efficient seed layer for HVPE. The expensive MOCVD GaN buffer can be skipped completely. To generate templates AIXaTECH can either use wafers provided by the customer or can supply templates with it’s own substrates. Typical dimensions range from 2” up to 300mm.

Customer Benefits

A competitive world

  • design freedom due to AIXTECH’s patent portfolio
  • single crystal quality
  • no in-situ cleaning
  • no nucleation layer
  • no 3D-2D growth
  • direct deposition of intended LED layer structure
  • increased MOCVD throughput
  • replacement of expensive MOCVD GaN-template for HVPE
  • reduced costs